AO3407 Datasheet, PDF (2/3 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

30V P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ^{(TA = 25oC unless otherwise noted)}
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
BVDSS
RDS(on)
RDS(on)
VGS = 0V, ID = -250uA
VGS = -10V, ID = -4.1A
VGS = -4.5V, ID = -3A
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
VGS(th)
IDSS
IGSS
gfs
VDS =VGS, ID = -250uA
VDS = -24V, VGS = 0V
VGS = ± 20V, VDS = 0V
VDS = -5V, ID = -4 A
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = -15V , ID =-5.3A
VGS = -10V
VDD =-15V, RL=15Ω
ID = -1 A, VGEN = -10 V
RG = 6Ω
VDS = -15 V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
IS = 2.6A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Min.
-30
-1.0
5.5
AO3407
Typ.
Miax.
Unit
V
48.0 64.5
64.0
87.0
mΩ
-1
-3.0
V
-1
uA
± 100 nA
S
9.35
3.43
nC
1.7
10.8
2.33
ns
22.53
3.87
551.57
90.96
pF
60.79
-2.6
A
-1.3
V
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semiconductor
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