AO3407 Datasheet, PDF (1/3 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

30V P-Channel Enhancement Mode MOSFET
VDS= -30V
RDS(ON), Vgs@-10V, Ids@ 4.1A < 64.5mΩ
RDS(ON), Vgs@-4.5V, Ids@-3.0A < 87m _Ω
AO3407
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
SOT-23-3L
G
S
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.65 2.95
1.50 1.70
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
1.90
1.00
0.10
0.40
0.85
Max.
REF.
1.30
0.20
-
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
-30
VGS
± 20
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
ID
5.3
IDM
-20
TA = 25^oC
1.4
TA = 75^oC
PD
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
R_θJA
125
Unit
V
A
W
o_C
o_C/W
JinYu
semiconductor
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