AO3400 Datasheet, PDF (2/3 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

30V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS ^{(TA = 25oC unless otherwise noted)}
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
BVDSS VGS = 0V, ID = 250uA
RDS(on) VGS = 10V, ID = 5.8A
RDS(on) VGS = 4.5V, ID =5A
Drain-Source On-State Resistance
RDS(on) VGS = 2.5V, ID =4A
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Gate Resistance
IDSS VDS = 24V, VGS = 0V
IGSS VGS = ± 12V, VDS = 0V
gfs
VDS = 5V, ID = 5A
Rg F=1.0MHz
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 15V, ID = 5.8A
VGS = 4.5V
VDD = 15V, RL=2.7Ω
ID = 1A, VGEN = 10V
RG = 3Ω
VDS = 10V, VGS = 0V
f = 1.0 MHz
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD IS = 1.6A, VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Min.
30
0.7
10
6
AO3400
Typ.
Miax.
Unit
V
22.0
28.0
27.0
33.0
mΩ
43.0
52.0
1.4
V
1
uA
±100
nA
15
S
7
7.5
Ω
11
14
1.6
nC
2.8
7
11
15
20
ns
38
50
3
10
340
115
pF
33
1.6
A
1.2
V
JinYu
semiconductor
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