AO3400 Datasheet, PDF (1/3 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

30V N-Channel Enhancement Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ
RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ
RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
AO3400
D
SOT-23-3L
G
S
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.65
2.95
1.50
1.70
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90
1.00
0.10
0.40
0.85
REF.
1.30
0.20
-
1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS
± 12
Continuous Drain Current
ID
5.8
Pulsed Drain Current
Maximum Power Dissipation
IDM
30
TA = 25^oC
1.4
PD
TA = 75^oC
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
145
Unit
V
A
W
o_C
o_C/W
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