H45N03E Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (25V, 45A)

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200518
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 3/5
80
60
40
20
0
0
Fig.1 Output Characteristic
VGS=5.0V,6.0V,10.0V
4.5V
4.0V
3.5V
3.0V
1
2
3
4
5
VDS, Drain-to-Source Voltage (V)
Fig.2 Transfer Characteristic
60
VDS=10V
40
25^oC
20
TJ=125^oC
-55^oC
0
2
2.5
3
3.5
4
4.5
5
VGS, Gate-to-Source Voltage (V)
Fig.3 On Resistance & Drain Current
50
45
40
35
30
25
VGS=4.5V
20
15
VGS=10.0V
10
0
20
40
60
80
ID - Drain Current (A)
Fig.5 On Resistance & Junction Temperature
1.6
VGS=10V
ID=30A
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, Junction Temperature (^oC)
H45N03E
Fig.4 On Resistance & Gate to Source Voltage
80
ID=25A
70
60
50
40
30
125^oC
20
10
TJ =25^oC
0
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
3000
2500
Ciss
Fig.6 Capacitance
f=1MHz
VGS=0V
2000
1500
1000
500
Coss, Crss
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
HSMC Product Specification