H45N03E Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (25V, 45A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 2/5
ELectrical Characteristics
Characteristic
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Symbol
Test Condition
Min. Typ. Max. Unit
BV_DSS
R_DS(on)
V_GS(th)
I_DSS
I_GSS
R_g
g_fs
V_GS=0V, I_D=250uA
V_GS=4.5V, I_D=25A
V_GS=10V, I_D=25A
V_DS=V_GS, I_D=250uA
V_DS=24V, V_GS=0V
V_GS=±20V, V_DS=0V
V_DS=0V, V_GS=1V at 1MHz
V_DS=10V, I_D=35A
25
-
-
V
-
-
20
mΩ
-
-
15
1
1.6
3
V
-
-
1
uA
-
-
±100 nA
-
1
-
Ω
-
6
-
S
Q_g
-
18.4
-
Q_gs
V_DS=15V, I_D=35A, V_GS=10V
-
3.57
-
nC
Q_gd
-
2.9
-
td(on)
-
11.7
-
tr
td(off)
tf
V_DD=15V, R_L=15Ω, I_D=1A
V_GEN=10V, R_G=24Ω
-
3.87
-
nS
-
32.13
-
-
5.4
-
C_iss
- 1176.3 -
C_oss
V_DS=15V, V_GS=0V, f=1MHz
- 268.43 -
pF
C_rss
- 142.67 -
I_S
V_SD
I_S=20A, V_GS=0V
-
-
35
A
-
0.87 1.5
V
H45N03E
HSMC Product Specification