H4422S Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (30V, 11A)

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200907
Issued Date : 2009.03.09
Revised Date :
Page No. : 3/5
10V
24
6V
4V
20 Ta=25℃
16
12
3V
8
4
0
0
1
2
3
4
5
6
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output Characteristics
10V
6V
24
4V
T a=150_℃
20
16
3V
12
8
4
0
0
1
2
3
4
5
6
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output Characteristics
30
28
26
24
22
20
18
ID=10A
16
T a=25_℃
14
12
10
2
4
6
8
10
12
VGS,Gate-to-Source Voltage(V)
Fig 3.On-Resistance v.s.Gate Voltage
100
10
T j=150_℃
1
T j=25_℃
0.1
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse Diode
20
18
16
14
12
10
ID=10A
8
VGS=10V
6
4
2
0
-50 -25 0 25 50 75 100 125 150
Tj,Junction Temperature(℃)
Fig 4.NormalizedOn-Resistance
v.s.Junction Temperature
3
2.5
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150
Tj,Junction Temperature(℃)
Fi_Fg_ig6.₆G_.a_Gt_ae_teTh_Tr_he_rs_eh_so_hl_od_ldV_Vol_ota_ltg_ae_ge
v._vs_.._sju_.jn_uc_nt_ci_to_in_onT_Tem_emp_pe_er_ra_atu_tur_re_e
H4422S
HSMC Product Specification