H4422S Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (30V, 11A)

HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (T_A=25°C, unless otherwise noted)
Symbol
• Static
BV_DSS
Characteristic
Drain-Source Breakdown Voltage
R_DS(on)
Drain-Source On-State Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate-Body Leakage Current
g_FS
Forward Transconductance
• Drain-Source Diode Characteristics
I_S
Maximum Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage
Test Conditions
V_GS=0V, I_D=250uA
V_GS=10V, I_D=11A
V_GS=4.5V, I_D=5.0A
V_DS=V_GS, I_D=250uA
V_DS=30V, V_GS=0V
V_GS=±20V, V_DS=0V
V_DS=10V, I_D=10A
V_GS=0V, I_S=2.1A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Spec. No. : MOS200907
Issued Date : 2009.03.09
Revised Date :
Page No. : 2/5
Min. Typ. Max. Unit
30
-
-
V
13.50
mΩ
24
1
-
3
V
-
-
1
uA
-
-
±100 nA
20
-
S
-
-
2.6
A
-
-
1.2
V
H4422S
HSMC Product Specification