H35N03J Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (25V, 35A)

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200515
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 3/5
Fig.1 Output Characteristic
80
V_GS= 5.0V, 6.0V, 10.0V
60
4.5V
4.0V
40
3.5V
20
3.0V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Fig.2 Transfer Characteristic
60
V_DS =10V
40
20
25^oC
T_J = 125^oC
-55^oC
0
2 2.5 3 3.5 4 4.5 5
V_GS - Gate-to-Source Voltage (V)
Fig.3 On Resistance vs
Drain Current
35
30
25
20
V_GS = 4.5V
15
10
5
VGS=10.0V
0
0
20
40
60
80
I_D - Drain Current (A)
Fig.4 On Resistance vs Gate
to Source Voltage
50
I_D =30A
40
30
20
125^oC
10
0
2
T_J =25^oC
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Fig.5 On Resistance vs
Junction Temperature
1.6
V_GS = 10V
I_D =30A
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Tem perature (^oC)
H35N03J
3000
2500
2000
1500
1000
500
0
0
Fig. 6 Capacitance
Cis s
f =1MHz
V _GS=0V
Coss, Crss
5
10
15
20
25
V_DS - Drain-to-Source Voltage (V)
HSMC Product Specification