H35N03J Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (25V, 35A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200515
Issued Date : 2005.01.01
Revised Date : 2005.10.14
Page No. : 1/5
H35N03J
N-Channel Enhancement-Mode MOSFET (25V, 35A)
Features
• R_DS(on)=8.5mΩ@V_GS=10V, I_D=30A
• R_DS(on)=13mΩ@V_GS=4.5V, I_D=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H35N03J Pin Assignment
Tab
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
3
2
1
Pin 2 & Tab: Drain
Pin 3: Source
D
Internal Schematic
Diagram
G
S
Maximum Ratings & Thermal Characteristics
(T_A=25^oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^*1
Maximum Power Dissipation
T_A=25^oC
T_A=75^oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
I_D=35A, V_DD=20V, L=0.14mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)^*2
*1: Maximum DC current limited by the package.
*2: 1-in² 2oz Cu PCB board
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_stg
E_AS
R_θJC
R_θJA
Value
25
±20
35
140
57
23
-55 to 150
300
2.2
50
Units
V
V
A
A
W
W
o_C
mJ
O_C/W
O_C/W
Switching
Test Circuit
VDD
VIN
D
VGEN
RG _G
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50%
50%
Pulse Width
H35N03J
HSMC Product Specification