H05N60 Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200603
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
10
9
8
7
6
5
4
3
2
1
0
0
On-Region Characteristic
VGS=8V
VGS=10V
VGS=6V
VGS=5V
VGS=4V
2
4
6
8
10
VDS, Drain-Source Voltage (V)
Capacitance Characteristics
1000
800
600
Crss
400
200
Ciss
Coss
0
0.1
1
10
100
VDS, Deain-Source Voltage (V)
On Resistance Variation with Temperature
2.500
2.400
2.300
2.200
VGS=10V
2.100
2.000
1.900
ID=3A
1.800
1.700
1.600
1.500
0
25
50
75
100
125
150
TC, Case Temperature (^oC)
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
0
Typical On-Resistance & Drain Current
VGS=10V
VGS=15V
1 2 3 4 5 6 7 8 9 10 11 12
ID, Drain Current (A)
H05N60E, H05N60F
Drain Current Variation with Gate Voltage and
Temperature
6
VDS=10 V
5
Tc=25^oC
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-Source Voltage (V)
Maximum Safe Operating Area
10
1ms
100ms
1
10ms
0.1
10
100
VDS, Drain-Source Voltage (V)
1000
HSMC Product Specification