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H05N60 Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200603
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 2/5
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case Max.
RθJA
Thermal Resistance Junction to Ambient Max.
Value
TO-220AB
1.3
TO-220FP
4
62.5
Units
°C/W
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=600V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=2.5A)*
Forward Transconductance (VDS=15V, ID=2.5A)*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=300V, ID=5A, RG=9.1Ω,
VGS=10V)*
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=480V, ID=5A, VGS=10V)*
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Min. Typ. Max. Unit
600 -
-
V
-
-
1
uA
-
-
50 uA
-
- 100 nA
-
- -100 nA
2
-
4
V
-
-
2.3 Ω
1.5
-
- mhos
- 600 -
- 150 -
pF
-
15
-
-
30
-
-
15
-
ns
-
40
-
-
15
-
-
10
-
-
6
-
nC
-
4
-
-
4.5
-
nH
-
7.5
-
nH
Source-Drain Diode
Symbol
VSD
Forward On Voltage(1)
ton
Forward Turn-On Time
trr
Reverse Recovery Time
**: Negligible, Dominated by circuit inductance
Characteristic
IS=5A, VGS=0V, TJ=25oC
IS=5A, VGS=0V, dIS/dt=100A/us
Min. Typ. Max. Units
-
-
1.6
V
-
**
-
ns
- 302 -
ns
H05N60E, H05N60F
HSMC Product Specification