HSK2474I Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel MOSFETs

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 2000.11.01
Page No. : 2/5
Electrical Characteristics (Ta=25°C)
Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Forward Transconductance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge
Gate-Drain Charge (Miller)
Symbol
V_(BR)DSS
V_GS(th)
I_DSS
I_GSS
gfs
R_DS(ON)
C_iss
C_rss
C_oss
t_r
t_on
t_f
T_off
Q_g
Q_gs
Q_gd
Min.
250
2.0
-
-
0.80
-
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit Test Conditions
-
-
V I_D=250uA
- 4.0 V V_DS=4V, I_D=250uA
- 25 uA V_DS=200V
- ±100 uA V_GS=±20V
1.2 -
V_DS=50V,I_D=1.3A
1.2 2.0 Ω V_GS=10V, I_D=1.3A
280 -
30 -
42 -
pF
pF
pF
V_DS=10V, V_GS=0V
f=1.0MHz
45 -
30
45
-
-
nS
V_DD=100V, I_D=1.0A
R_G=24Ω, R_D=45Ω
135 -
-
8.2 nC _{ID=2.7A, VDS=200V}
- 1.8 nC V_GS=10V
- 4.5 nC
HSMC Product Specification