HSK2474I Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel MOSFETs

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 2000.11.01
Page No. : 1/5
HSK2474I
N - Channel MOSFETs
Description
• Dynamic dv/dt Rating
• Repetitive Avalanche rated
• Surface Mount
• Straigh Lead
• Available in Tape&Reel
• Fast Switching
• Ease of Paralleling
Features
• Low Drain-Source ON Resistance - R_DS(ON)=1.2Ω(Typ.)@ V_DS=10V, I_D=1.3A
• High Forward Transfer Admittance -|Yfs|=1.2S@V_DS=50V, I_D=1.3A
• Low Leakage Current - I_DSS=100uA (Max.)@V_DS=200V
• Enhancement-Mode - V_th = 2.0~4.0V@V_DS=4V, I_D=250uA
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
• Maximum Voltages and Currents
Drain to Source Breakdown Voltage ................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source Voltage.................................................................................................... ± 20 V
Drain Current (Cont.) ......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
Thermal Characteristics
Characteristic
Junction to Case
Junction to Ambient
Symbol
R_θJC
R_θJA
Max.
5
50
Units
°C/W
°C/W
HSMC Product Specification