HBF422 Datasheet, PDF (2/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 2/3
Current Gain & Collector Current
1000
hFE @ VCE=20V
125^oC
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
100
25^oC
75^oC
125^oC
75^oC
25^oC
10
100
0.1
1
10
100
0.1
1
10
100
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
1000
25^oC
75^oC
125^oC
VBE(sat) @ IC=10IB
100
0.1
1
10
100
Collector Current-IC (mA)
Cutoff Frequency & Collector Current
1000
100
VCE=10V
10
1
HBF422
10
100
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
100
10
Cob
1
0.1
1
10
100
1000
Reverse Biased Voltage (V)
10000
1000
Safe Operating Area
PT=100ms
PT=1ms
PT=1s
100
10
1
1
10
100
1000
Forward Biased Voltage-VCE (V)
HSMC Product Specification