HBF422 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HBF422
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Video B-class Power stages in TV-receivers
Spec. No. : HE6404
Issued Date : 1993.03.18
Revised Date : 2002.04.18
Page No. : 1/3
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 830 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 250 V
VCEO Collector to Emitter Voltage .................................................................................... 250 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
250
-
BVCEO
250
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*hFE
50
-
fT
60
-
Max.
-
-
-
100
10
0.6
-
-
Unit
V
V
V
nA
uA
V
MHz
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=5V
IC=30mA, IB=3mA
VCE=20V, IC=25mA
IE=10mA, VCE=10V, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBF422
HSMC Product Specification