HBF421 Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 2/4
Current Gain & Collector Current
1000
hFE @ VCE=20V
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=6IB
125^oC
75^oC
125^oC
100
25^oC
75^oC
25^oC
100
1
10
100
Collector Current-IC (mA)
10
1
10
100
Collector Current-IC (mA)
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
125^oC
100
25^oC
75^oC
10
1
10
100
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
100
10
Cob
1
0.1
1
10
100
Reverse Biased Voltage (V)
HBF421
Saturation Voltage & Collector Current
1000
25^oC
125^oC
75^oC
100
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
VBE(sat) @ IC=10IB
10
100
Collector Current-IC (mA)
PD - Ta
50
100
150
200
Ambient Temperature-Ta (^oC )
HSMC Product Specification