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| HBF421 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HBF421
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HA200214
Issued Date : 2002.08.01
Revised Date : 2004.06.18
Page No. : 1/4
Description
Video B-class Power stages in TV-receivers
Absolute Maximum Ratings
TO-92
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................................................... 830 mW
⢠Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................................................ -300 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -300 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current ........................................................................................................................................ -50 mA
IBM Peak Base Current ................................................................................................................................... -50 mA
ICM Peak Collector Current ........................................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Min.
Typ.
Max.
-300
-
-
-300
-
-
-5
-
-
-
-
-100
-
-
-100
-
-
-0.6
50
-
-
60
-
-
Unit
V
V
V
nA
nA
V
MHz
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-200V, IE=0
VEB=-5V, IE=0
IC=-30mA, IB=-3mA
VCE=-20V, IC=-25mA
IE=-10mA, VCE=-10V, f=100MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HBF421
HSMC Product Specification
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