HBD437T Datasheet, PDF (2/3 Pages) Hi-Sincerity Mocroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 2/3
Current Gain & Collector Current
1000
125^oC
75^oC
25^oC
100
Current Gain & Collector Current
1000
125^oC
25^oC
100
75^oC
hFE @ VCE=1V
10
1
10
100
1000
Collector Current IC (mA)
10000
Saturation Voltage & Collector Current
1000
VCE(sat) @ IC=10IB
75^oC
100
25^oC
10
1
10
125^oC
10
100
1000
Collector Current IC (mA)
10000
Safe Operating Area
hFE @ VCE=5V
10
1
10
100
1000
Collector Current IC (mA)
10000
10000
On Voltage & Collector Current
VBE(on) @ VCE=1V
1000
25^oC
75^oC
125^oC
100
1
10
100
1000
Collector Current IC (mA)
10000
1
0.1
1ms 100ms 1s
0.01
1
10
100
Forward Voltage-VCE (V)
HBD437T
HSMC Product Specification