HBD437T Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – COMPLEMENTARY SILICON POWER TRANSISTORS

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200201
Issued Date : 2001.04.01
Revised Date : 2002.02.08
Page No. : 1/3
HBD437T
COMPLEMENTARY SILICON POWER TRANSISTORS
Description
The HBD437T is silison epitaxial-base NPN power transistor in TO-126
plastic package, intented for use in medium power linear and switching
applications. The complementary PNP type is HBD438T.
Absolute Maximum Ratings (Ta=25°C)
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICM
IB
PD
Tstg
Tj
Parametor
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (VBE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current
Collector Peak Current (t≤10ms)
Base Current
Total Dissipation at
Tc=25°C
Ta=25°C
Storage Temperature
Max. Operating Junction Temperature
Value
45
45
45
5
4
7
1
25
1.5
-55 to 150
150
TO-126
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
5
°C/W
Max.
83
°C/W
Electrical Characteristics (Ta=25°C, unless otherwise specified)
Symbol
ICBO
ICES
IEBO
*VCEO(sus)
*VCE(sat)
*VBE
*hFE
fT
Parameter
Collector Cut-off Current (IE=0)
Collector Cut-off Current
(VBE=0)
Emitter Cut-off Current (IC=0)
Collector-Emitter Sustaining
Voltage (IB=0)
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Test Conditions
VCB=45V
VCE=45V
VEB=5V
IC=100mA
Min. Typ. Max. Unit
-
- 100 uA
-
- 100 uA
1 mA
45
-
-
V
IC=2A, IB=0.2A
-
0.4 0.6 V
IC=10mA,VCE=5V
IC=2A, VCE=1V
IC=10mA, VCE=5V
IC=0.5A, VCE=1V
IC=2A, VCE=1V
IC=0.25A, VCE=1V
- 0.58 -
V
-
-
1.2 V
30 130 -
85 140 -
40
-
-
3
-
- MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBD437T
HSMC Product Specification