H3055MJ Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (30V, 12A)

HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (T_A=25°C, unless otherwise noted)
Symbol
• Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
• Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=250uA
VGS=4.5V, ID=5.2A
VGS=10V, ID=6A
VDS=VGS, ID=250uA
VDS=30V, VGS=0V
VGS=±20V, VDS=0V
VDS=10V, ID=6A
VDS=10V, ID=6A, VGS=6.9V
VDS=10V, VGS=0V, f=1MHz
VDD=15V, ID=1A, VGEN=10V
RGEN=3Ω, RL=2.2Ω
VGS=0V, IS=1A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 2/4
Min. Typ. Max. Unit
30
-
-
V
-
34
45
mΩ
-
25
35
0.6
-
1.5
V
-
-
1
uA
-
-
±100 nA
7
13
-
S
-
4.2
-
-
1.2
-
nC
-
1.7
-
-
410
-
-
73
-
pF
-
55
-
-
3
-
-
2
-
ns
-
10
-
-
3
-
-
-
4.3
A
-
-
1
V
V_GEN
Switching
Test Circuit
V_DD
R_D
V_IN
D
V_OUT
R_G
G
S
t_d(on)
t_on
Switching
Waveforms
t_r
90%
t_d(off)
t_off
t_f
90%
Output, V_OUT
10%
Input, V_IN
10%
50%
10%
Inverted
90%
50%
Pulse Width
H3055MJ
HSMC Product Specification