H3055MJ Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (30V, 12A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200702
Issued Date : 2007.03.01
Revised Date : 2007.03.28
Page No. : 1/4
H3055MJ
N-Channel Enhancement-Mode MOSFET (30V, 12A)
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced
trench process. It has been optimized for power management applications with a
wide range of gate drive voltage (2.5V-10V)
H3055MJ Pin Assignment
Tab
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
3
2
1
Pin 2 & Tab: Drain
Pin 3: Source
D
Internal Schematic
Diagram
G
S
Features
• RDS(on)=45mΩ@VGS=4.5V, ID=5.2A; RDS(on)=35mΩ@VGS=10V, ID=6A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
Applications
• Battery Protection
• Load Switch
• Power Management
Absolute Maximum Ratings (TA=25^oC, unless otherwise noted)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID
Drain Current (Continuous)
IDM
Drain Current (Pulsed) ^*1
Total Power Dissipation @TA=25^oC
PD
Total Power Dissipation @TA=75^oC
Tj, Tstg
R_θJA
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient^*2
*1: Maximum DC current limited by the package
*2: 1-in² 2oz Cu PCB board
Ratings
30
±20
12
30
2
1.3
-55 to +150
62.5
Units
V
V
A
A
W
W
°C
°C/W
H3055MJ
HSMC Product Specification