H2N6718V Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 2/4
Current Gain & Collector Current
1000
Saturation Voltage & Collector Current
1000
VCE=1V
100
100
10
0.1
1
10
100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
100
10
0.1
VCE(sat) @ IC=10IB
1
10
100
Collector Current (mA)
1000
Cutoff Frequency & Collector Current
1000
10
Cob
VCE=10V
100
1
0.1
10000
1000
100
10
1
1
1
10
100
Reverse Biased Voltage (V)
1000
Safe Operating Area
PT=1 ms
PT=100 ms
PT=1 s
10
100
Forward Voltage-VCE (V)
1000
10
1
10
100
Collector Current (mA)
1000
Power Derating
1800
1600
1400
1200
1000
800
600
400
200
0
0
20
40
60
80
100 120 140 160
Ambient Temperature-Ta(^oC)
HSMC Product Specification