H2N6718V Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 1/4
H2N6718V
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718V is designed for general purpose medium power
amplifier and switching.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................... 1.6 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
100
-
-
BVCEO
100
-
-
BVEBO
5
-
-
ICBO
-
-
100
*VCE(sat)
-
-
350
*hFE1
80
-
-
*hFE2
50
-
250
*hFE3
20
-
-
fT
50
-
-
Cob
-
-
20
Unit
Test Conditions
V
V
V
nA
mV
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=80V, IE=0
IC=350mA, IB=35mA
IC=50mA, VCE=1V
IC=250mA, VCE=1V
IC=500mA, VCE=1V
VCE=10V, IC=50mA, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification