H2N6427 Datasheet, PDF (2/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 2/3
Current Gain & Collector Current
100k
10000
Saturation Voltage & Collector Current
hFE @ VCE=5V
VBE(sat) @ IC=1000IB
10k
1000
VCE(sat) @ IC=1000IB
VCE(sat) @ IC=100IB
1k
1
10
100
Collector Current (mA)
1000
10000
On Voltage & Collector Current
100
1
10
100
Collector Current (mA)
1000
Capacitance & Reverse-Biased Voltage
100
1000
VBE(on) @ VCE=5V
10
Cob
100
1
10
100
Collector Current (mA)
10000
1000
100
Safe Operating Area
PT=100ms
PT=1ms
PT=1s
10
1
1
10
Forward Voltage-VCE (V)
1000
100
1
0.1
1
10
100
Reverse-Biased Voltage (V)
700
600
500
400
300
200
100
0
0
PD-Ta
20 40 60 80 100 120 140 160
Ambient Temperature-Ta(^oC)
HSMC Product Specification