H2N6427 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
H2N6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.15
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 40 V
VCES Collector to Emitter Voltage...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 12 V
IC Collector Current ...................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCES
40
-
BVEBO
12
-
ICBO
-
-
IEBO
-
-
ICES
-
-
*VCE(sat)1
-
0.71
*VCE(sat)2
-
0.9
*VBE(sat)
-
1.52
VBE(on)
-
1.24
*hFE1
10
-
*hFE2
20
-
*hFE3
14
-
Cob
-
5.4
Max.
-
-
-
50
50
1
1.2
1.5
2.0
1.75
100
200
140
7
Unit
Test Conditions
V IC=100uA, IE=0
V IC=10uA, IB=0
V IE=10uA, IC=0
nA VCB=30V, IE=0
nA VEB=10V, IC=0
uA VCE=25V, VBE=0
V IC=50mA, IB=0.5mA
V IC=500mA, IB=0.5mA
V IC=500mA, IB=0.5mA,
V VCE=5V, IC=50mA
K VCE=5V, IC=10mA
K VCE=5V, IC=100mA
K VCE=5V, IC=500mA
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification