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| H2302N Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (20V, 2.4A) | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
⢠Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
⢠Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
⢠Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=250uA
VGS=4.5V, ID=2.8A
VGS=2.5V, ID=2A
VDS=VGS, ID=250uA
VDS=9.6V, VGS=0V
VGS=±8V, VDS=0V
VDS=5V, ID=4A
VDS=6V, ID=2.8A, VGS=4.5V
VDS=6V, VGS=0V, f=1MHz
VDD=6V, RL=6â¦, ID=1A,
VGEN=4.5V, RG=6â¦
VGS=0V, IS=0.75A
Note: Pulse Test: Pulse Width â¤300us, Duty Cycleâ¤2%
Spec. No. : MOS200613
Issued Date : 2006.07.01
Revised Date : 2006.07.12
Page No. : 2/4
Min. Typ. Max. Unit
20
-
-
V
-
45
60
mâ¦
-
70 115
0.65 0.95 1.2
V
-
-
1
uA
-
-
±100 nA
-
6.5
-
S
-
3.69
-
-
0.7
-
nC
-
1.06
-
- 427.12 -
- 80.56 -
PF
-
57
-
-
6.16
-
-
7.56
-
nS
- 16.61 -
-
4.07
-
-
-
2.4
A
-
0.8 1.2
V
H2302N
HSMC Product Specification
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