H2302N Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Enhancement-Mode MOSFET (20V, 2.4A)

HI-SINCERITY
MICROELECTRONICS CORP.
H2302N
N-Channel Enhancement-Mode MOSFET (20V, 2.4A)
Features
• R_DS(on)<60mΩ@V_GS=4.5V, I_D=2.8A
• R_DS(on)<115mΩ@V_GS=-2.5V, I_D=2A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
Spec. No. : MOS200613
Issued Date : 2006.07.01
Revised Date : 2006.07.12
Page No. : 1/4
H2302N Pin Assignment & Symbol
3
12
3-Lead Plastic SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Drain
Gate
Source
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current (Continuous)
I_DM
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
P_D
Total Power Dissipation @T_A=75^oC
T_j, T_stg
R_θJA
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)^*2
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in² 2oz Cu PCB board
Ratings
20
±8
2.4
8
0.9
0.57
-55 to +150
145
Units
V
V
A
A
W
W
°C
°C/W
H2302N
HSMC Product Specification