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| H2301N Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
⢠Static
BVDSS
Characteristic
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
⢠Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
⢠Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
Test Conditions
VGS=0V, ID=-250uA
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2A
VDS=VGS, ID=-250uA
VDS=-9.6V, VGS=0V
VGS=±8V, VDS=0V
VDS=-5V, ID=-4A
VDS=-6V, ID=-2.8A, VGS=-4.5V
VDS=-6V, VGS=0V, f=1MHz
VDD=-6V, RL=6â¦, ID=-1A,
VGEN=-4.5V, RG=6â¦
VGS=0V, IS=-0.75A
Note: Pulse Test: Pulse Width â¤300us, Duty Cycleâ¤2%
Spec. No. : MOS200612
Issued Date : 2006.07.01
Revised Date : 2006.07.11
Page No. : 2/4
Min. Typ. Max. Unit
-20
-
-
V
-
69 100
mâ¦
-
83 150
-0.45
-
-0.95
V
-
-
-1
uA
-
-
±100 nA
-
6.5
-
S
- 15.23 -
-
5.49
-
nC
-
2.74
-
- 882.51 -
- 145.54 -
PF
- 97.26 -
- 17.28 -
-
3.73
-
nS
- 36.05 -
-
6.19
-
-
-
-2.4
A
-
-0.8 -1.2
V
H2301N
HSMC Product Specification
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