H2301N Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – P-Channel Enhancement-Mode MOSFET (-20V, -2.2A)

HI-SINCERITY
MICROELECTRONICS CORP.
H2301N
P-Channel Enhancement-Mode MOSFET (-20V, -2.2A)
Features
• R_DS(on)<100mΩ@V_GS=-4.5V, I_D=-2.8A
• R_DS(on)<150mΩ@V_GS=-2.5V, I_D=-2A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Improved Shoot-Through FOM
Spec. No. : MOS200612
Issued Date : 2006.07.01
Revised Date : 2006.07.11
Page No. : 1/4
H2301N Pin Assignment & Symbol
3
12
3-Lead Plastic SOT-23
Package Code: N
Pin 1: Gate 2: Source 3: Drain
Source
Gate
Drain
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
I_DM
P_D
T_j, T_stg
R_θJA
Drain Current (Continuous)
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Total Power Dissipation @T_A=75^oC
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)^*2
*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.
*2: 1-in² 2oz Cu PCB board
Ratings
-20
±8
-2.2
-8
0.9
0.57
-55 to +150
140
Units
V
V
A
A
W
W
°C
°C/W
H2301N
HSMC Product Specification