H12N60 Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET (600V,12A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 2/4
ELectrical Characteristics (T_j=25°C, unless otherwise specified)
Symbol
Characteristic
V_(BR)DSS Drain-Source Breakdown Voltage
ΔV_(BR)DSS/ΔT _{Breakdown Voltage Temp. Coefficient}
J
Drain-Source Leakage Current
I_DSS
Drain-Source Leakage Current
I_GSSF
I_GSSR
V_GS(th)
R_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V_GS=0V, I_D=250uA
Reference to 25^oC, I_D=1mA
V_DS=600V, V_GS=0V
V_DS=400V, V_GS=0V, T_j=125°C
V_gsf=30V, V_DS=0V
V_gsr=-30V, V_DS=0V
V_DS=V_GS, I_D=250uA
V_GS=10V, I_D=6.0A^*4
V_DS=40V, I_D=6.0A
V_DS=25V, V_GS=0V, f=1MHz
(V_DD=325V, I_D=12A, R_G=4.7Ω,
R_D=32Ω)^*4
(V_DS=520V, I_D=12A, V_GS=10V)
*4
Min. Typ. Max. Unit
600 -
-
V
- 0.58 - V/^oC
-
- 10 uA
60 uA
-
- 100 nA
-
- -100 nA
2
-
4
V
-
- 0.8 Ω
5
-
S
- 1830 -
- 157 - pF
- 2.2 -
- 50 -
- 50 -
ns
- 311 -
- 55 -
- 52
- 10
nC
- 19
Source-Drain Diode
Symbol
Characteristic
Min.
I_S
Continuous Source Current Page1 MOSFET symbol showing the
(Body Diode)
integral reverse P-N junction diode.
-
V_SD
Diode Forward Voltage
I_S=12A, V_GS=0V, T_J=25°C^*4
-
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
*5: C_OSS eff. Is a fixed capacitance that gives the same charging time as C_OSS while V_DS is rising from 0 to 80% V_DSS
Typ.
-
-
Max. Units
12 A
1.4 V
H10N60F
HSMC Product Specification