H12N60 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET (600V,12A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
Page No. : 1/4
H12N60F
H12N60F
N-Channel Power MOSFET (600V,12A)
Applications
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching
3-Lead TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3 ^{Pin 3: Source}
2
1
Features
H12N60F Series Symbol
D
• H10N60F is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
G
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
S
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
Parameter
Drain-Source Voltage
Continuous Drain Current (V_GS@10V, T_C=25^oC)
Continuous Drain Current (V_GS@10V, T_C=100^oC)
Pulsed Drain Current^*1
Gate-to-Source Voltage
Total Power Dissipation (T_C=25^oC)
P_D
Linear Derating Factor
E_AS
Single Pulse Avalanche Energy^*2
I_AR
Avalanche Current^*1
E_AR
Repetitive Avalanche Energy^*1
T_J
Operating Junction Temperature Range
T_stg
Storage Temperature Range
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T_J=25°C, L=1.2mH, R_G=25Ω, I_AS=10A
*3: I_SD≤14A, di/dt≤130A/us, V_DD≤V_(BR)DSS, T_J≤150°C
Value
600
12
7.6
40
±30
TO-220AB
175
TO-220FP
50
TO-220AB
1.43
TO-220FP
0.41
68
12
66
-55 to 150
-55 to 150
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
Thermal Characteristics
Symbol
Parameter
Rθ_JC
Rθ_JA
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
Value
TO-220AB
1.3
TO-220FP
5
62
Units
°C/W
°C/W
H10N60F
HSMC Product Specification