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| H10N65 Datasheet, PDF (2/6 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET (650V,10A) | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 2/6
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS Drain-Source Breakdown Voltage
ÎV(BR)DSS/ÎT Breakdown Voltage Temp. Coefficient
J
IDSS
Drain-Source Leakage Current
IGSSF
Gate-Source Forward Leakage
IGSSR Gate-Source Reverse Leakage
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
VDS=650V, VGS=0V
Vgsf=30V, VDS=0V
Vgsr=-30V, VDS=0V
VDS=VGS, ID=250uA
VGS=10V, ID=5.0A*4
VDS=40V, ID=5.0A
VDS=25V, VGS=0V, f=1MHz
(VDD=325V, ID=10A, RG=10Ω,
RD=32Ω)*4
(VDS=525V, ID=10A, VGS=10V)
*4
Min. Typ. Max. Unit
650 -
-
V
- 0.58 - V/oC
-
- 10 uA
-
- 100 nA
-
- -100 nA
2
-
4
V
-
- 1.0 Ω
5
-
S
- 1430 -
- 117 - pF
- 2.2 -
- 47 -
- 75 -
ns
- 345 -
- 67 -
- 44
- 10
nC
- 16
Source-Drain Diode
Symbol
Characteristic
Min.
IS
Continuous Source Current Page1 MOSFET symbol showing the
(Body Diode)
integral reverse P-N junction diode.
-
VSD
Diode Forward Voltage
IS=10A, VGS=0V, TJ=25°C*4
-
*4: Pulse Test: Pulse Widthâ¤300us, Duty Cycleâ¤2%
*5: COSS eff. Is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 80% VDSS
Typ.
-
-
Max. Units
10 A
1.4 V
H10N65 Series
HSMC Product Specification
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