H10N65 Datasheet, PDF (1/6 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET (650V,10A)

HI-SINCERITY
MICROELECTRONICS CORP.
H10N65 Series
N-Channel Power MOSFET (650V,10A)
Applications
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching
Features
• H10N65 is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
Spec. No. : MOS200906
Issued Date : 2009.03.23
Revised Date :2009.08.05
Page No. : 1/6
H10N65 Series
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
1 ^{2 3} _{3-Lead TO-220FP)}
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
1 ^{2 3Pin 3: Source}
H10N65 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GS
P_D
Parameter
Drain-Source Voltage
Continuous Drain Current (V_GS@10V, T_C=25^oC)
Continuous Drain Current (V_GS@10V, T_C=100^oC)
Pulsed Drain Current^*1
Gate-to-Source Voltage
Total Power Dissipation (T_C=25^oC)
Linear Derating Factor
E_AS
Single Pulse Avalanche Energy^*2
I_AR
Avalanche Current^*1
E_AR
Repetitive Avalanche Energy^*1
T_J
Operating Junction Temperature Range
T_stg
Storage Temperature Range
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T_J=25°C, L=1.2mH, R_G=25Ω, I_AS=10A
*3: I_SD≤14A, di/dt≤130A/us, V_DD≤V_(BR)DSS, T_J≤150°C
Value
650
10
6.4
36
±30
TO-220AB
150
TO-220FP
50
TO-220AB
1.25
TO-220FP
0.4
700
10
66
-55 to 150
-55 to 150
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
Thermal Characteristics
Symbol
Parameter
Rθ_JC Thermal Resistance Junction to Case (Max.)
Rθ_JA Thermal Resistance Junction to Ambient (Max.)
H10N65 Series
Value
TO-220AB
1.3
TO-220FP
5
62
Units
°C/W
°C/W
HSMC Product Specification