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| H08N02CTS Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – Dual N-Channel Enhancement-Mode MOSFET (20V, 8A) | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
⢠Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
gFS
Forward Transconductance
⢠Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
⢠Drain-Source Diode Characteristics
IS
Maximum Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS=0V, ID=250uA
VGS=2.5V, ID=5.5A
VGS=4.5V, ID=6.5A
VDS=VGS, ID=250uA
VDS=16V, VGS=0V
VGS=±4.5V, VDS=0V
VDS=10V, ID=6.5A
VDS=10V, ID=6A, VGS=4.5V
VDS=10V, VGS=0V, f=1MHz
VDD=10V, ID=1A, VGS=4.5V
RGEN=6â¦
VGS=0V, IS=1.5A
Note: Pulse Test: Pulse Width â¤300us, Duty Cycleâ¤2%
Spec. No. : MOS200611
Issued Date : 2006.06.01
Revised Date : 2006.06.28
Page No. : 2/4
Min. Typ. Max. Unit
20
-
-
V
-
-
30
mâ¦
-
-
20
0.6
-
1.6
V
-
-
1
uA
-
-
±200 nA
-
30
-
S
-
9
-
-
2.4
-
nC
-
3.6
-
-
476
-
-
65.1
-
pF
-
49
-
-
50
-
-
100
-
ns
-
500
-
-
200
-
-
-
1.7
A
-
0.61 1.2
V
VGEN
Switching
Test Circuit
VDD
RD
VIN
D
VOUT
RG
G
S
td(on)
ton
Switching
Waveforms
tr
90%
td(off)
toff
tf
90%
Output, VOUT
10%
Input, VIN
10%
50%
10%
Inverted
90%
50%
Pulse Width
H08N02CTS
HSMC Product Specification
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