H08N02CTS Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – Dual N-Channel Enhancement-Mode MOSFET (20V, 8A)

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200611
Issued Date : 2006.06.01
Revised Date : 2006.06.28
Page No. : 1/4
H08N02CTS
Dual N-Channel Enhancement-Mode MOSFET (20V, 8A)
Features
• R_DS(on)<30mΩ@V_GS=2.5V, I_D=5.5A
• R_DS(on)<20mΩ@V_GS=4.5V, I_D=6.5A
• High Density Cell Design for Ultra Low On-Resistance
• High Power and Current Handing Capability
• Fully Characterized Avalanche Voltage and Current
• Ideal for Li ion Battery Pack Applications
8-Lead Plastic TSSOP-8
Package Code: TS
H08N02CTS Symbol & Pin Assignment
8765
Q2
Q1
1234
Pin 1: Drain
Pin 2 / 3: Source 1
Pin 4: Gate 1
Pin 5: Gate 2
Pin 6 / 7: Source 2
Pin 8: Drain
Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)
Symbol
Parameter
V_DS
V_GS
I_D
I_DM
P_D
T_j, T_stg
R_θJA
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulsed) ^*1
Total Power Dissipation @T_A=25^oC
Total Power Dissipation @T_A=75^oC
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)^*2
*1: Maximum DC current limited by the package under the ambient condition at room temperature.
*2: 1-in² 2oz Cu PCB board
Ratings
20
±12
8
30
1.5
0.96
-55 to +150
83
Units
V
V
A
A
W
W
°C
°C/W
H08N02CTS
HSMC Product Specification