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| H07N65 Datasheet, PDF (2/6 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance Junction to Case Max.
RθJA Thermal Resistance Junction to Ambient Max.
Value
TO-220AB
1.02
TO-220FP
3.3
62
Units
OC/W
ELectrical Characteristics (TJ=25OC, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=650V, VGS=0V)
Drain-Source Leakage Current (VDS=650V, VGS=0V, Tj=125OC)
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA)
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=3.5A)*
gFS
Forward Transconductance (VDS=15V, ID=3.5A)*
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
VGS=0V, VDS=25V, f=1MHz
(VDD=300V, ID=7A, RG=25Ω,
VGS=10V)*
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
(VDS=480V, ID=7A, VGS=10V)*
Qgd
Gate-Drain Charge
*: Pulse Test: Pulse Width â¤300us, Duty Cycleâ¤2%
Min. Typ. Max. Unit
650 -
-
V
-
-
1
uA
-
-
50 uA
-
- 100 nA
-
- -100 nA
2
3
4
V
-
1 1.2 Ω
2
-
-
S
- 1095 -
-
95
-
pF
-
3
-
-
39
-
-
29
-
ns
- 249 -
-
37
-
-
27 38
-
5.1
-
nC
-
8.5
-
Source-Drain Diode
Symbol
Characteristic
VSD
Forward On Voltage(1)
IS=7.0A, VGS=0V, TJ=25oC
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=7A, VGS=0V, dIS/dt=100A/us
**: Negligible, Dominated by circuit inductance
Min.
-
-
-
Typ. Max. Units
-
1.4
V
365 -
ns
3.5
-
ns
H07N65E, H07N65F
HSMC Product Specification
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