H07N65 Datasheet, PDF (1/6 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200801
Issued Date : 2008.07.22
Revised Date : 2009.0514
Page No. : 1/6
H07N65 Series
N-Channel Power Field Effect Transistor
Description
H07N65 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
D
1
Features
H07N65 Series
G
Symbol:
S
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and V_DS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-Source Voltage
I_D
Drain to Current (Continuous)
I_DM
Drain to Current (Pulsed)
V_GS
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T_C=25^oC)
H07N65E (TO-220AB)
H07N65F (TO-220FP)
P_D
Derate above 25^OC
H07N65E (TO-220AB)
H07N65F (TO-220FP)
T_j
Operating Temperature Range
T_stg
Storage Temperature Range
E_AS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25^OC
(V_DD=50V, V_GS=10V, I_L=7A, L=10mH, R_G=25Ω)
T_L
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Note: 1. V_DD=50V, I_D=7A
2. Pulse Width and frequency is limited by T_j(max) and thermal response
Value
650
7
28
±30
120
48
1.18
0.38
-55 to 150
-55 to 150
530
260
Units
V
A
A
V
W
W
W/°C
W/^oC
O_C
O_C
mJ
°C
H07N65E, H07N65F
HSMC Product Specification