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| H05N50 Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL POWER MOSFET | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200601
Issued Date : 2006.02.01
Revised Date : 2006.02.20
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=500V, VGS=0V)
Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=2.5A)(*4)
Forward Transconductance (VDS=50V, ID=2.7A)(*4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
(VDD=250V, ID=5A, RG=50â¦,
RD=79â¦)(*4)
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS=400V, ID=5A, VGS=10V)
(*4)
Internal Drain Inductance (Measured from the drain lead 0.25â from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25â from
package to source bond pad)
*4: Pulse Test: Pulse Widthâ¤300us, Duty Cycleâ¤2%
Source-Drain Diode
Symbol
Characteristic
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
trr
Reverse Recovery Time
VSD
Diode Forward Voltage
**: Negligible, Dominated by circuit inductance
IF=3.1A, di/dt=100A/us, Tj=25°C
(*4)
IS=4.5A, VGS=0V, Tj=25°C (*4)
Min. Typ. Max. Unit
500 -
-
V
-
-
1 uA
50 uA
-
- 100 nA
-
- -100 nA
2
-
4V
-
- 1.4 â¦
2.5 -
-
S
- 900 -
- 150 - pF
- 85 -
- 15 -
- 60 -
ns
- 90 -
- 55 -
-
- 45
-
- 10 nC
-
- 30
- 4.5 - nH
- 7.5 - nH
Min. Typ. Max. Units
-
-
2 uC
-
**
-
-
- 640 ns
-
- 1.5 V
H05N50E, H05N50F
HSMC Product Specification
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