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H05N50 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-CHANNEL POWER MOSFET
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200601
Issued Date : 2006.02.01
Revised Date : 2006.02.20
Page No. : 1/4
H05N50 Series
N-CHANNEL POWER MOSFET
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance
Junction to Case Max.
RθJA
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB 1.71
TO-220FP
3.3
62
Units
°C/W
°C/W
H05N50 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
123
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
H05N50 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain to Current (Continuous)
IDM
Drain to Current (Pulsed) (*1)
VGS
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
PD
Derate above 25°C
TO-220AB
TO-220FP
EAS
Single Pulse Avalanche Energy (*2)
IAR
Avalanche Current (*1)
EAR
Repetitive Avalanche Energy (*1)
dv/dt Peak Diode Recovery (*3)
Tj
Operating Temperature Range
Tstg
Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: VDD=50V, starting Tj=25°C, L=24mH, RG=25Ω, IAS=4.5A
*3: ISD≤4.5A, di/dt≤75A/us, VDD≤V(BR)DSS, TJ≤150°C
H05N50E, H05N50F
Value
500
5
20
±30
80
38
0.59
0.3
300
5
7.4
5
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
W/°C
mJ
A
mJ
V/ns
°C
°C
°C
HSMC Product Specification