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| H02N65 Datasheet, PDF (2/6 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200910
Issued Date : 2009.04.07
Revised Date :
Page No. : 2/6
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case Max.
RθJA
Thermal Resistance Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62.5
Units
2.87
°C/W
5.5
°C/W
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
Drain-Source Leakage Current (VDS=650V, VGS=0V)
Drain-Source Leakage Current (VDS=480V, VGS=0V, Tj=125°C)
Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V)
Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=1A)*
gFS
Forward Transconductance (VDSâ¥50V, ID=1A)*
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
(VDD=300V, ID=2A, RG=25Ω,
VGS=10V)*
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
(VDS=300V, ID=2A, VGS=10V)*
Qgd
Gate-Drain Charge
*: Pulse Test: Pulse Width â¤300us, Duty Cycleâ¤2%
Min. Typ. Max. Unit
650 -
-
V
-
-
5
uA
-
-
50 uA
-
- 100 nA
-
- -100 nA
2
-
4
V
-
-
4.6
Ω
1
-
- mhos
- 300 -
-
30
-
pF
-
3
-
-
13
-
-
12
-
ns
-
73
-
-
15
-
-
9.3 13
-
2
-
nC
-
3.3
-
Source-Drain Diode
Symbol
Characteristic
VSD
Forward On Voltage(1)
IS=2A, VGS=0V, TJ=25oC
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IS=2A, VGS=0V, dIS/dt=100A/us
**: Negligible, Dominated by circuit inductance
Min.
-
-
-
Typ. Max. Units
-
1.4
V
235 -
ns
1.0
-
nC
H02N60E, H02N60F
HSMC Product Specification
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