H02N65 Datasheet, PDF (1/6 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200910
Issued Date : 2009.04.07
Revised Date :
Page No. : 1/6
H02N65 Series
N-Channel Power Field Effect Transistor
Description
H02N65 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
Features
H02N65 Series _G
Symbol:
S
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
Symbol
I_D
I_DM
V_GS
P_D
T_j, T_stg
E_AS
T_L
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T_C=25^oC)
H02N60E (TO-220AB)
H02N60F (TO-220FP)
Derate above 25°C
H02N60E (TO-220AB)
H02N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V_DD=100V, V_GS=10V, I_L=2A, L=10mH, R_G=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±30
44
23
0.22
0.18
-55 to 150
120
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60E, H02N60F
HSMC Product Specification