English
Language : 

H01N60 Datasheet, PDF (2/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor
◁
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 2/5
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction to Case Max.
Thermal Resistance Junction to Ambient Max.
Value
4.5
110
Units
°C/W
°C/W
ELectrical Characteristics (TJ=25°C, unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Unit
• Off Characteristics
VDSS
Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
600 -
∆BVDSS/∆TJ
Breakdown Voltage Temperature Coefficient (ID=250uA, Referenced
to 25oC)
-
0.6
-
V
-
V/oC
IDSS
IGSSF
IGSSR
Zero Gate Voltage Drain Current (VDS=600V, VGS=0V)
Zero Gate Voltage Drain Current (VDS=480V, Tj=125°C)
Gate-Body Leakage Current-Forward (VGS=30V, VDS=0V)
Gate-Body Leakage Current-Reverse (VGS=-30V, VDS=0V)
-
-
1
uA
-
-
50 uA
-
- 100 nA
-
- -100 nA
• On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage (VDS=VGS, ID=250uA)
Static Drain-Source On-Resistance (VGS=10V, ID=0.6A) *3
Forward Transconductance (VDS=40V, ID=0.5A) *3
• Dynamic Characteristics
2
-
4
V
-
-
8
Ω
- 0.75 -
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
• Switching Characteristics
VGS=0V, VDS=25V, f=1MHz
- 210 250
-
19 25 pF
-
4
8
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
td(off)
Turn-off Delay Time
tf
Turn-off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD=300V, ID=1.1A
RG=25Ω *3
VDS=480V, ID=1.1A
VGS=10V *3
• Drain-Source Diode Characteristics and Maximum Ratings
-
-
30
-
-
60
ns
-
-
45
-
-
75
-
15 20
-
4
-
nC
-
3
-
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage (VGS=0V, IS=1A)
trr
Reverse Recovery Time (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
Qrr
Reverse Recovery Charge (VGS=0V, IS=1.1A, dlF/dt=100A/us) *3
*3: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
-
-
1
A
-
-
4
A
-
-
1.4
V
- 190 -
ns
- 0.53 -
nC
H01N60I, H01N60J
HSMC Product Specification
 ▷