H01N60 Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
H01N60 Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
• 1A, 600V, R_DS(on)=8Ω@V_GS=10V
• Low Gate Charge 15nC(Typ.)
• Low C_rss 4pF(Typ.)
• Fast Switching
• Improved d_v/d_t Capability
Absolute Maximum Ratings
Symbol
Parameter
V_DSS
I_D
I_DM
V_GS
E_AS
I_AR
E_AR
dv/dt
Drain-Source Voltage
Drain Current (Continuous T_C=25^oC)
Drain Current (Continuous T_C=100^oC)
Drain Current (Pulsed) ^*1
Gate-Source Voltage
Single Pulse Avalanche Energy
(L=59mH, I_AS=1.1A, V_DD=50V, R_G=25Ω, Starting T_J=25°C)
Avalanche Current ^*1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ^*2
V_GS
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T_A=25^oC)
P_D
Total Power Dissipation (T_C=25^oC)
Derate above 25°C
T_j, T_stg
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 5 seconds
*1: Repetitive Rating : Pulse width limited by maximum junction temperature
*2: I_SD≤1.1A, di/dt≤200A/us, V_DD≤BV_DSS, Starting TJ=25^oC
Spec. No. : MOS200502
Issued Date : 2005.03.01
Revised Date : 2005.09.28
Page No. : 1/5
H01N60 Series Pin Assignment
Tab
3
2
1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Tab
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
3
2
1
Pin 3: Source
D
H01N60 Series
G
Symbol:
S
H01N60I / H01N60J
600
1
0.6
4
±30
50
1
2.8
4.5
±20
2.5
28
0.22
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/nS
V
W
W
W/°C
°C
°C
H01N60I, H01N60J
HSMC Product Specification