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| H01N45A Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
Electrical Characteristics (Tcase=25°C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
Min. Typ. Max. Unit
ON/OFF
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Dynamic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS=0)
Gate-Body Leakage Current
(VDS=0)
Gate Threshold Voltage
Static Drain-Source On Resistance
VGS=0V, ID=250uA
VDS=Max. Rating
VDS=Max. Rating, TC=125oC
VGS=±30V
VDS=VGS, ID=250uA
VGS=10V, ID=0.5A
450 -
-
-
-
-
-
V
1
uA
50
-
- ±100 nA
2.3 3 3.7 V
-
4.1 4.5 â¦
gFS*1
Ciss
Coss
Crss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching On
VDSâ¥ID(on)xRDS(on)max., ID=0.5A
VDS=25V, VGS=0V, f=1MHz
-
1.1
-
S
- 185 230
- 27.5 -
pF
-
6
10
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Switching Off
(VDD=225V, ID=0.5A, RG=4.7â¦,
-
VGS=10V)
-
6.7
4
-
-
ns
-
14 20
(VDS=360V, ID=0.5A, VGS=10V,
RG=4.7â¦)
-
2
-
nC
-
3.2
-
tr(Voff)
tf
tC
Off-Voltage Rise Time
Fall Time
Cross-Over Time
Source Drain Diode
-
8.5
-
(VDD=360V, ID=1.5A, RG=4.7â¦,
VGS=10V)
-
12
-
ns
-
18
-
ISD
Source-Drain Current
ISDM*2
Source-Drain Current (pulsed)
VSD*1
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.
ISD=1.5A, VGS=0
ISD=1.5A, di/dt=100A/us
VDD=100V, TJ=150oC
-
-
1.5
A
-
-
6
-
-
1.6
V
- 225 -
ns
-
530 -
uC
-
4.7
-
A
H01N45A
HSMC Product Specification
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