H01N45A Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
H01N45A
N-Channel Power Field Effect Transistor
Features
• Typical R_DS(on)=4.1Ω
• Extremely High dv/dt Capability
• 100% Avalanche Tested
• Gate Charge Minimized
• New High Voltage Benchmark
Applications
• Switch Mode Low Power Supplies (SMPS)
• Low Power, Low Cost CFL (Compact Fluorescent Lamps)
• Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
V_DS
V_DGR
V_GS
I_D
I_D
I_DM
P_D
dv/dt
T_j, T_stg
I_AR
E_AS
Parameter
Drain-Source Voltage (V_GS=0)
Drain-Gate Voltage (R_GS=20KΩ)
Gate-Source Voltage
Drain Current (Continuous) at T_C=25^oC
Drain Current (Continuous) at T_C=100^oC
Drain Current (Pulsed)
Total Power Dissipation at T_C=25^oC
Derate Factor
Peak Diode recovery Voltage Slope
Operating Junction and Storage Temperature Range
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by T_J Max.)
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(V_DD=100V, V_GS=10V, I_L=2A, L=10mH, R_G=25Ω)
Thermal Data
Symbol
R_thj-amb
R_thj-lead
T_L
Parameter
Thermal Resistance Junction-Ambient (Max.)
Thermal Resistance Junction-Leadt (Max.)
Maximum Lead Temperature for Soldering Purpose
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A Pin Assignment
3-Lead Plastic TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
123
D
Symbol: _G
S
Value
450
450
±30
0.5
0.315
2
2.5
0.025
3
-65 to 150
1.5
25
Units
V
V
V
A
A
A
W
W/°C
V/ns
°C
A
mJ
Value
120
40
260
Units
o_C/W
o_C/W
o_C
H01N45A
HSMC Product Specification