HBCW65C Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HBCW65C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBCW65C is a general purpose transistor.
Spec. No. : HE6808
Issued Date : 1998.02.01
Revised Date : 2002.10.24
Page No. : 1/3
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ............................................................................................ -65 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCEO Collector to Emitter Voltage ...................................................................................... 32 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
32
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
80
-
*hFE2
180
-
*hFE3
250
-
*hFE4
100
-
fT
-
170
Cob
-
8
Max.
-
-
-
20
20
700
300
2.0
-
-
630
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
mV
mV
V
MHz
pF
IC=10uA
IC=10mA
IE=10uA
VCB=32V, IE=0
VEB=4V, IC=0
IC=500mA, IB=50mA
IC=100mA, IB=10mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=1V, IC=10mA
VCE=1V, IC=100mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1.0MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBCW65C
HSMC Product Specification