HBCS-1100 Datasheet, PDF (6/7 Pages) Agilent(Hewlett-Packard) – High Resolution Optical Reflective Sensor

3.0
2.0
V_CE = 5 V
70 °C
25 °C
1.0
-20 °C
0
10
100
1000
10,000
I_B – BASE CURRENT (nA)
Figure 4. Normalized Transistor DC
Forward Current Gain vs. Base
Current at Temperature.
50
I_B – BASE CURRENT (nA)
TEMP = 25 °C
160 ^nA
40
140 ^nA
30
120 ^nA
100 ^nA
20
80 ^nA
60 ^nA
10
40 nA
20 nA
0
0 2 4 6 8 10 12 14 16 18 20
V_CE – COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 5. Common Emitter Collector
Characteristics.
V_CC = 5 V
R_L 100 K
REFLECTOR
3
1
REFERENCE
PLANE
I_FPK = 50 mA
t_P = 100 µs,
RATE = 1 KHz
HP 8007
ANODE
V_F ⁶
47 Ω
CATHODE ₄
SUBSTRATE, CASE
D_S
2
8
V_O
R_F 10 M
D_S
Figure 6. Slew Rate Measurement Circuit.
EMITTER
DETECTOR
Figure 7. Image Location.
4-20
DETECTOR IMAGE
THROUGH EMITTER
LENS
MAXIMUM
SIGNAL POINT
EMITTER IMAGE
THROUGH DETECTOR
LENS