HBCS-1100 Datasheet, PDF (3/7 Pages) Agilent(Hewlett-Packard) – High Resolution Optical Reflective Sensor

Absolute Maximum Ratings at T_A = 25°C
Parameter
Symbol Min.
Storage Temperature
T_S
-40
Operating Temperature
T_A
-20
Lead Soldering Temperature
1.6 mm from Seating Plane
Average LED Forward Current
I_F
Peak LED Forward Current
I_FPK
Reverse LED Input Voltage
V_R
Package Power Dissipation
P_P
Collector Output Current
I_O
Supply and Output Voltage
V_D, V_C, V_E -0.5
Transistor Base Current
I_B
Transistor Emitter Base Voltage
V_EB
Max.
+75
+70
260 for 10 sec.
50
75
5
120
8
20
5
0.5
Units
°C
°C
°C
mA
mA
V
mW
mA
V
mA
V
Fig. Notes
11
2
1
1
3
10
System Electrical/Optical Characteristics at T_A = 25°C
Parameter
Symbol Min. Typ. Max. Units
Conditions
Total Photocurrent
(I_PR + I_PS)
I_P
575 nA T_A = 20°C I_F = 35 mA,
150 250 375
T_A = 25°C ^VD ^{= V}C ^{= 5 V}
80
T_A = 70°C
Reflected Photocurrent I_PR
(I_PR) to Internal Stray
I_PS
Photocurrent (I_PS)
4 8.5
Transistor DC Static
h_FE
50
Current Transfer Ratio
100 200
Slew Rate
0.08
I_F = 35 mA,
V_C = V_D = 5 V
V/µs
T_A = 20°C V_CE = 5 V,
T_A = 25°C I_C = 10 µA
R_L = 100 K, I_PK = 50 mA,
R_F = 10 M, t_ON = 100 µs,
Rate = 1 kHz
Image Diameter
d
0.17
mm I_F = 35 mA,
= 4.27 mm (0.168 in.)
Maximum Signal Point
4.01 4.27 4.52 mm Measured from Reference
Plane
50% Modulation
Transfer Function
MTF
2.5
I_npr/mm I_F = 35 mA,
=4.27 mm
Depth of Focus
∆
1.2
FWHM
mm 50% of I_P at = 4.27 mm
Effective Numerical
N.A.
0.3
Aperture
Image Location
D
0.51
mm Diameter Reference to
Centerline
= 4.27 mm
Thermal Resistance
Θ_JC
85
°C/W
Fig. Note
2, 3 4
15
3
4, 5
6
8, 10 8, 9
9
10, 5, 7
11
95
6
4-17