AT-41485 Datasheet, PDF (4/5 Pages) Agilent(Hewlett-Packard) – Up to 6 GHz Low Noise Silicon Bipolar Transistor

AT-41485 Typical Scattering Parameters, Common Emitter,
Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 10mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
S₁₂
dB
Mag.
0.1
.74 -40
28.2 25.80 156
-35.6 .017
0.5
.61 -126
21.9 12.46 108
-29.2 .035
1.0
.57 -161
16.6
6.80 87
-27.9 .040
1.5
.57 -180
13.4
4.67 75
-25.7 .052
2.0
.58 166
11.0
3.55 64
-24.5 .060
2.5
.59 160
9.3
2.92 59
-23.3 .068
3.0
.61 150
7.7
2.42 50
-21.9 .080
3.5
.62 142
6.4
2.09 41
-20.8 .091
4.0
.62 134
5.3
1.84 32
-19.5 .106
4.5
.62 125
4.3
1.65 24
-18.4 .120
5.0
.63 115
3.5
1.50 15
-17.2 .138
5.5
.65 103
2.7
1.37
6
-16.1 .157
6.0
.69
92
1.8
1.24 -4
-15.3 .172
Ang.
81
44
38
47
54
58
63
61
59
57
54
49
46
S₂₂
Mag. Ang.
.93
-14
.57
-31
.46
-33
.43
-34
.41
-38
.40
-39
.39
-46
.41
-54
.42
-62
.43
-67
.44
-73
.43
-78
.40
-86
AT-41485 Typical Scattering Parameters, Common Emitter,
Z_O = 50 Ω, T_A = 25°C, V_CE = 8 V,I_C␣ =␣ 25mA
Freq.
GHz
S₁₁
Mag. Ang.
S₂₁
dB
Mag. Ang.
S₁₂
dB
Mag.
0.1
.55 -68
32.0 40.01 146
-40.9 .009
0.5
.58 -153
23.1 14.20 99
-32.7 .023
1.0
.58 -177
17.4
7.39 82
-29.8 .032
1.5
.58 169
14.0
5.01 71
-27.3 .043
2.0
.60 158
11.6
3.78 61
-24.6 .059
2.5
.60 153
9.8
3.09 58
-23.7 .065
3.0
.63 147
8.1
2.55 48
-21.7 .082
3.5
.64 140
6.9
2.21 39
-20.7 .092
4.0
.64 133
5.8
1.94 31
-19.4 .107
4.5
.64 125
4.8
1.74 23
-18.1 .125
5.0
.64 115
4.0
1.58 14
-17.1 .140
5.5
.66 105
3.2
1.45
5
-15.9 .160
6.0
.70
94
2.4
1.32 -5
-15.1 .175
A model for this device is available in the DEVICE MODELS section.
Ang.
57
52
63
60
64
71
68
67
65
63
56
50
47
S₂₂
Mag. Ang.
.85
-19
.47
-29
.41
-28
.39
-30
.38
-36
.36
-39
.35
-47
.37
-56
.39
-64
.40
-71
.41
-78
.40
-82
.37
-91
AT-41485 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NF_O
dB
Γ_opt
Mag
Ang
0.1
1.3
.12
5
0.5
1.3
.10
25
1.0
1.4
.06
50
2.0
1.7
.25
172
4.0
3.0
.48
-131
R_N/50
0.17
0.17
0.16
0.16
0.24
4-127